2SA1127 データシートの表示（PDF） - Panasonic Corporation

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2SA1127

Silicon PNP epitaxial planer type

Panasonic Corporation 

Transistor

2SA1127

Silicon PNP epitaxial planer type

For low-frequency and low-noise amplification

Complementary to 2SC2634

s Features

q Low noise characteristics.

q High foward current transfer ratio hFE.

s Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

–60

V

Collector to emitter voltage VCEO

–55

V

Emitter to base voltage

VEBO

–7

V

Peak collector current

ICP

–200

mA

Collector current

IC

–100

mA

Collector power dissipation PC

400

mW

Junction temperature

Tj

150

˚C

Storage temperature

Tstg

–55 ~ +150

˚C

5.0±0.2

Unit: mm

4.0±0.2

0.7±0.1

0.45+Ð00..115

2.5+Ð00..26

2.5+Ð00..26

0.45+Ð00..115

1 23

1:Emitter

2:Collector

3:Base

TO-92-A1 Package

EIAJ:SC–43A

s Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

Conditions

min

typ

max Unit

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter voltage

Transition frequency

ICBO

ICEO

VCBO

VCEO

VEBO

hFE*

VCE(sat)

VBE

fT

Noise voltage

NV

VCB = –10V, IE = 0

–1 –100 nA

VCE = –10V, IB = 0

– 0.01 –1

µA

IC = –10µA, IE = 0

–60

V

IC = –1mA, IB = 0

–55

V

IE = –10µA, IC = 0

–7

V

VCE = –5V, IC = –2mA

180

700

IC = –100mA, IB = –10mA

– 0.6

V

VCE = –1V, IC = –30mA

–1

V

VCB = –5V, IE = 2mA, f = 200MHz

200

MHz

VCE = –10V, IC = –1mA, GV = 80dB

Rg = 100kΩ, Function = FLAT

150 mV

*hFE Rank classification

Rank

R

hFE

180 ~ 360

S

260 ~ 520

T

360 ~ 700

108

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