2SA1041 データシートの表示（PDF） - Inchange Semiconductor

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2SA1041

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

V(BR)CBO Collector-base breakdown voltage IC=-0.1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-0.1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-7A; IB=-0.7A

VBEsat Base-emitter saturation voltage

IC=-7A; IB=-0.7A

ICBO

Collector cut-off current

VCB=-120V; IE=0

IEBO

Emitter cut-off current

VEB=-7V; IC=0

hFE

DC current gain

IC=-1.5A ; VCE=-5V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1.0MHz

fT

Transition frequency

IC=-1A ; VCE=-10V

Product Specification

2SA1041

MIN TYP. MAX UNIT

-120

V

-120

V

-7

V

-1.5

V

-1.8

V

-50 μA

-50 μA

35

200

350

pF

60

MHz

2

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