2SA1069 データシートの表示（PDF） - Inchange Semiconductor
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2SA1069 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1069 2SA1069A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2SA1069
2SA1069A
IC=-3.0A ,IB=-0.3A;L=1mH
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A
VBEsat Base-emitter saturation voltage
IC=-3A; IB=-0.3A
ICBO
Collector
cut-off current
2SA1069 VCB=-60V; IE=0
2SA1069A VCB=-80V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.3A ; VCE=-5V
hFE-2
DC current gain
IC=-3A ; VCE=-5V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=-3A ; VCC=-50V
IB1=-IB2=-0.3A;RL=17Ω
hFE-2 Classifications
M
L
K
40-80 60-120 100-200
MIN TYP. MAX UNIT
-60
V
-80
-0.6
V
-1.5
V
-10
μA
-10
μA
40
40
200
0.5
μs
2.5
μs
0.5
μs
2
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