2SA1075 データシートの表示（PDF） - Inchange Semiconductor

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2SA1075

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

2SA1075

2SA1076

IC=-1mA ;RBE=∞

V(BR)CBO

Collector-base

breakdown voltage

2SA1075

2SA1076

IC=-50μA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-50μA; IC=0

VCEsat Collector-emitter saturation voltage IC=-5A;IB=-0.5A

VBE

Base-emitter voltage

IC=-5A;VCE=-5V

2SA1075 VCB=-120V; IE=0

ICBO

Collector cut-off current

2SA1076 VCB=-160V; IE=0

2SA1075 VCE=-120V; IB=0

ICEO

Collector cut-off current

2SA1076 VCE=-160V; IB=0

IEBO

Emitter cut-off current

VEB=-7V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-7A ; VCE=-5V

Cob

Output capacitance

IE=0 ; VCB=-10V

fT

Transition frequency

IC=-1A ; VCE=-10V

Switching times

tr

Rise time

ts

Storage time

tf

Fall time

IC=-7.5A;RL=4Ω

IB1=-IB2=-0.75A

Product Specification

2SA1075 2SA1076

MIN TYP. MAX UNIT

-120

V

-160

-120

V

-160

-7

V

-1.8

V

-1.7

V

-50

μA

-1

mA

-50

μA

60

200

40

300

pF

60

MHz

0.15

μs

0.50

μs

0.11

μs

2

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