2SA1093 データシートの表示（PDF） - Inchange Semiconductor
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2SA1093 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0
VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A
VBE
Base-emitter voltage
IC=-4A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-4A ; VCE=-5V
fT
Transition frequency
IC=-1A ; VCE=-10V
Cob
Output capacitance
IE=0 ; VCB=-10V ;f=1MHz
hFE-1 Classifications
R
O
Y
55-110 80-160 120-240
Product Specification
2SA1093
MIN TYP. MAX UNIT
-120
V
-1.0 -2.0
V
-1.5 -2.5
V
-50 μA
-50 μA
55
240
30
90
MHz
150
pF
2
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