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2SA1072 データシートの表示(PDF) - Quanzhou Jinmei Electronic
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コンポーネント説明
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2SA1072
Silicon PNP Power Transistors
Quanzhou Jinmei Electronic
2SA1072 Datasheet PDF : 3 Pages
1
2
3
JMnic
Silicon PNP Power Transistors
Product Specification
2SA1072 2SA1073
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA1072
2SA1073
I
C
=-1mA ;R
BE
=
∞
V
(BR)CBO
Collector-base
breakdown voltage
2SA1072
2SA1073
I
C
=-50
μ
A ;I
E
=0
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-50
μ
A ;I
C
=0
V
CEsat
Collector-emitter saturation voltage I
C
=-5A ;I
B
=-
0.
5A
V
BE
Base-emitter on voltage
I
C
=-5A ; V
CE
=-5V
I
CBO
Collector
cut-off current
I
CEO
Collector
cut-off current
2SA1072 V
CB
=-120V; I
E
=0
2SA1073 V
CB
=-160V; I
E
=0
2SA1072 V
CE
=-120V; R
BE
=
∞
2SA1073 V
CE
=-160V; R
BE
=
∞
I
EBO
Emitter cut-off current
V
EB
=-7V; I
C
=0
h
FE-1
DC current gain
I
C
=-1A ; V
CE
=-5V
h
FE-2
DC current gain
I
C
=-7A ; V
CE
=-5V
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1MHz
f
T
Transition frequency
I
C
=-1A ; V
CE
=-10V;f=10MHz
Switching times
t
r
Rise time
t
stg
Storage time
t
f
Fall time
I
C
=-7.5A
I
B1
=-I
B2
=-0.75A;R
L
=4
Ω
MIN TYP. MAX UNIT
-120
V
-160
-120
V
-160
-7
V
-0.9 -1.8
V
-1.25 -1.7
V
-50
μ
A
-1
mA
-50
μ
A
60
200
40
300
pF
60
MHz
0.15
μ
s
0.50
μ
s
0.11
μ
s
2
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