2SA1111 データシートの表示（PDF） - Quanzhou Jinmei Electronic

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2SA1111

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SA1111 2SA1112

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

2SA1111

2SA1112

IC=-0.1mA ,IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-10μA ,IC=0

VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA

VBEsat Base-emitter saturation voltage

IC=-0.5A; IB=-50mA

ICBO

Collector cut-off current

VCB=-120V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE-1

DC current gain

IC=-150mA ; VCE=-10V

hFE-2

DC current gain

IC=-500mA ; VCE=-5V

COB

Output capacitance

fT

Transition frequency

IE=0 ; VCB=-10V;f=1MHz

IC=50mA ; VCE=-10V

MIN TYP. MAX UNIT

-150

V

-180

-5

V

-0.5 -2.0

V

-1.0 -2.0

V

-1

μA

-1

μA

65

330

50

30

pF

200

MHz

‹ hFE-1 Classifications

P

Q

R

S

65-110 90-155 130-220 185-330

2

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