2SA1390 データシートの表示（PDF） - Renesas Electronics

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2SA1390

Silicon PNP Epitaxial

Renesas Electronics 

2SA1390

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

–35

V

–35

V

–4

V

–500

mA

300

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO –35 —

voltage

Collector to emitter breakdown V(BR)CEO –35 —

voltage

Emitter to base breakdown

V(BR)EBO

–4

—

voltage

Collector cutoff current

I CBO

—

Collector to emitter saturation VCE(sat)

—

voltage

—

–0.2

DC current transfer ratio

hFE1*1

60

—

DC current transfer ratio

hFE2

10

—

Base to emitter voltage

VBE

—

–0.64

Notes: 1. The 2SA1390 is grouped by hFE1 as follows.

2. Pulse test

B

C

D

60 to 120 100 to 200 160 to 320

Max

—

—

—

–0.5

–0.6

320

—

—

Unit

V

V

V

µA

V

V

Test conditions

IC = –10 µA, IE = 0

IC = –1 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –20 V, IE = 0

IC = –150 mA, IB = –15 mA*2

VCE = –3 V, IC = –10 mA

VCE = –3 V, IC = –500 mA*2

VCE = –3 V, IC = –10 mA

See characteristic curves of 2SA673.

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