A1220A データシートの表示（PDF） - Inchange Semiconductor

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A1220A

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

2SA1220/A

DESCRIPTION

·Good Linearity of hFE

·High Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -120V(Min)-2SA1220

= -160V(Min)-2SA1220A

·Complement to Type 2SC2690/A

APPLICATIONS

·Adudio frequency power amplifier

·High frequency power amplifier

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

2SA1220

-120

VCBO Collector-Base Voltage

V

2SA1220A -160

2SA1220

-120

VCEO Collector-Emitter Voltage

V

2SA1220A -160

VEBO Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-1.2

A

ICM

Collector Current-Peak

-2.5

A

IBB

Base Current-Continuous

Collector Power Dissipation

@ Ta=25℃

PC

Total Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-0.3

A

1.2

W

20

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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