A1357 データシートの表示（PDF） - Inchange Semiconductor

部品番号

コンポーネント説明

メーカー

A1357

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA1357

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=B -0.1A

VBE(on) Base-Emitter On Voltage

IC=-4A ; VCE= -2V

ICBO

Collector Cutoff Current

VCB= -35V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -8V; IC= 0

hFE-1

DC Current Gain

IC= -0.5A ; VCE= -2V

hFE-2

DC Current Gain

IC= -4A ; VCE= -2V

fT

Current-Gain—Bandwidth Product

IC= -0.5A ; VCE= -2V

COB

Output Capacitance

IE= 0 ; VCB= -10V,ftest= 1MHz

‹ hFE-1 Classifications

O

Y

100-200 160-320

MIN TYP. MAX UNIT

-20

V

-1.0 V

-1.5 V

-0.1 μA

-0.1 μA

100

320

70

170

MHz

62

pF

isc Website：www.iscsemi.cn

2

Share Link: