SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA , IC=0
VCEsat Collector-emitter saturation voltage IC=-0.5A, IB=-50mA
VBE
Base-emitter voltage
IC=-0.1A ; VCE=-10V
ICBO
Collector cut-off current
VCB=-160V, IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-0.1A ; VCE=-10V
fT
Transition frequency
IC=-0.1A ; VCE=-10V
Product Specification
2SA1332
MIN TYP. MAX UNIT
-160
V
-5
V
-1.5
V
-1.0
V
-1.0
µA
-1.0
µA
60
240
200
MHz
2