SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1389
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50µA; IC=0
VCEsat Collector-emitter saturation voltage IC=-5A;IB=-0.5A
VBE
Base-emitter voltage
IC=-5A;VCE=-5V
ICBO
Collector cut-off current
VCB=-160V; IE=0
ICEO
Collector cut-off current
VCE=-160V; IB=0
IEBO
Emitter cut-off current
VEB=-7V; IC=0
hFE-1
hFE-2
fT
DC current gain
DC current gain
Transition frequency
IC=-1A ; VCE=-5V
IC=-7A ; VCE=-5V
IC=-1A ; VCE=-10V
MIN TYP. MAX UNIT
-160
V
-7
V
-1.8
V
-1.7
V
-50 µA
-1
mA
-50 µA
60
200
40
30
MHz
2