2SA1333 データシートの表示（PDF） - Quanzhou Jinmei Electronic
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2SA1333 Datasheet PDF : 3 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=-5A ;IB=-0.5A
VCB=-200V; IE=0
VEB=-5V; IC=0
hFE
DC current gain
IC=-5A ; VCE=-4V
fT
Transition frequency
IC=-1A ; VCE=-12V
Product Specification
2SA1333
MIN TYP. MAX UNIT
-200
V
-5
V
-2.0
V
-2.5
V
-100 μA
-100 μA
50
30
MHz
2
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