2SA1355 データシートの表示（PDF） - Quanzhou Jinmei Electronic

部品番号

コンポーネント説明

メーカー

2SA1355

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=-1mA ,IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ,IC=0

VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A

VBEsat Base-emitter saturation voltage

IC=-2A; IB=-0.2A

ICBO

Collector cut-off current

VCB=-40V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-2V

fT

Transition frequency

IC=-1A ; VCE=-5V

Product Specification

2SA1355

MIN TYP. MAX UNIT

-70

V

-70

V

-5

V

-0.5

V

-1.2

V

-100 μA

-100 μA

70

280

40

MHz

2

Share Link: