A1359 データシートの表示（PDF） - Quanzhou Jinmei Electronic
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A1359 Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A
VBE
Base-emitter on voltage
IC=-0.5A ; VCE=-2V
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
VCB=-40V; IE=0
VEB=-5V; IC=0
IC=-0.5A ; VCE=-2V
hFE-2
DC current gain
IC=-2.5A ; VCE=-2V
Cob
Output capacitance
IE=0 ; VCB=-10V f=1MHz
fT
Transition frequency
IC=-0.5A ; VCE=-2V
hFE-1 Classifications
O
Y
80-160
120-240
Product Specification
2SA1359
MIN TYP. MAX UNIT
-40
V
-0.8
V
-1.0
V
-0.1 μA
-0.1 μA
80
240
25
35
pF
100
MHz
2
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