2SA1512 データシートの表示（PDF） - Panasonic Corporation
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2SA1512 Datasheet PDF : 3 Pages
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Transistors
2SA1512
Silicon PNP epitaxial planar type
For low-frequency amplification
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Optimum for low-voltage operation and for converters
• Allowing supply with the radial taping
• Optimum for high-density mounting
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−25
V
Collector-emitter voltage (Base open) VCEO
−20
V
Emitter-base voltage (Collector open) VEBO
−7
V
Collector current
IC
− 0.5
A
Peak collector current
ICP
−1
A
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
4.0±0.2
2.0±0.2
Unit: mm
0.75 max.
0.45+–00..1200
(2.5) (2.5)
123
0.45+–00..1200
0.7±0.1
1: Emitter
2: Collector
3: Base
NS-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *1
Collector-emitter saturation voltage *1
Base-emitter saturation voltage *1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCBO
VCEO
VEBO
ICBO
ICEO
hFE1 *2
hFE2
VCE(sat)
VBE(sat)
fT
Cob
IC = −10 µA, IE = 0
−25
IC = −1 mA, IB = 0
−20
IE = −10 µA, IC = 0
−7
VCB = −25 V, IE = 0
VCE = −20 V, IB = 0
VCE = −2 V, IC = − 0.5 A
90
VCE = −2 V, IC = −1 A
25
IC = −500 mA, IB = −50 mA
IC = −500 mA, IB = −50 mA
VCB = −10 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
Typ Max
−100
−1
220
− 0.4
−1.2
150
15 25
Unit
V
V
V
nA
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE1
90 to 155 130 to 220
Publication date: January 2003
SJC00019BED
1
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