2SA1577W データシートの表示（PDF） - Galaxy Semi-Conductor

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2SA1577W

PNP Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

BL Galaxy Electrical

Production specification

PNP Silicon Epitaxial Planar Transistor

2SA1577W

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0

-40

Collector-emitter breakdown

voltage

V(BR)CEO

IC=-1mA,IB=0

-32

Emitter-base breakdown voltage

V(BR)EBO IE=-100μA,IC=0

-5

Collector cut-off current

ICBO

VCB=-20V,IE=0

Emitter cut-off current

IEBO

VEB=-4V,IC=0

DC current gain

hFE

VCE=-3V,IC=-10mA

82

V

V

V

-1 μA

-1 μA

390

Collector-emitter saturation voltage VCE(sat)

Transition frequency

fT

Collector output capacitance

Cob

IC=-100mA, IB=-10mA

VCE=-5V, IC= -20mA

200

f=100MHz

VCB=-10V,IE=0,f=1MHz

7

-0.4 V

MHz

pF

CLASSIFICANTION OF hFE

Rank

P

Range

82-180

marking

HP

Q

120-270

HQ

R

180-390

HR

Document number: BL/SSSTF030

Rev.A

www.galaxycn.com

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