2SA1566JIDTL-E データシートの表示（PDF） - Renesas Electronics

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2SA1566JIDTL-E

Silicon PNP Epitaxial

Renesas Electronics 

2SA1566

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO –120

—

—

V IC = –10 µA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO –120

—

—

V IC = –1 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

–5

—

—

V IE = –10 µA, IC = 0

Collector cutoff current

ICBO

—

—

–0.1

µA VCB = –70 V, IE = 0

Emitter cutoff current

DC current transfer ratio

Collector to emitter saturation voltage

Base to emitter voltage

IEBO

hFE*1

VCE(sat)

VBE(sat)

—

250

—

—

—

–0.1

µA VEB = –2 V, IC = 0

—

800

VCE = –12 V, IC = –2 mA*2

—

–0.15

V IC = –10 mA, IB = –1 mA*2

—

–1.0

V IC = –10 mA, IB = –1 mA*2

Notes: 1. The 2SA1566 is grouped by hFE as follows.

2. Pulse test

Grade

D

E

Mark

JID

JIE

hFE

250 to 500 400 to 800

Rev.2.00 Aug 10, 2005 page 2 of 5

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