2SA1489 データシートの表示（PDF） - Inchange Semiconductor
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2SA1489 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1489
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A
ICBO
Collector cut-off current
VCB=-80V; IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
VEB=-6V; IC=0
IC=-2A ; VCE=-4V
IC=0.5A ; VCE=-12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-3A;RL=10Ω
IB1=-IB2=-0.3A
VCC=30V
MIN TYP. MAX UNIT
-80
V
-1.5
V
-100 μA
-100 μA
50
20
MHz
0.25
μs
0.5
μs
0.1
μs
2
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