2SA1748 データシートの表示（PDF） - Panasonic Corporation
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2SA1748 Datasheet PDF : 3 Pages
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Transistors
2SA1748
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4562
■ Features
• High transition frequency fT
• Small collector output capacitance Cob
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−50
V
Collector-emitter voltage (Base open) VCEO
−50
V
Emitter-base voltage (Collector open) VEBO
−5
V
Collector current
IC
−50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
0.3+–00..01
3
Unit: mm
0.15+–00..0150
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: AL
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
−50
Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0
−50
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−5
Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0
Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0
Forward current transfer ratio *
hFE VCE = −10 V, IC = −2 mA
200
Collector-emitter saturation voltage
VCE(sat) IC = −10 mA, IB = −1 mA
Transition frequency
fT
VCB = −10 V, IE = 2 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
Typ Max
− 0.1
250
1.5
− 0.1
−100
500
− 0.3
Unit
V
V
V
µA
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
200 to 400 250 to 500
Publication date: March 2003
SJC00028BED
1
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