2SA1730 データシートの表示（PDF） - KEXIN Industrial
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2SA1730 Datasheet PDF : 2 Pages
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SMD Type
PNP Epitaxial Planar Silicon
2SA1730
TransistIoCrs
Features
Adoption of FBET , MBIT processes.
Large current capacity.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Small-sized package.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-40
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-3
A
Collector current (pulse)
ICP
-6
A
Collector dissipation *
PC
1.5
W
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Mounted on ceramic board (250mm2 X 0.8mm).
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