2SA1672 データシートの表示（PDF） - Inchange Semiconductor
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2SA1672 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-5 A;IB=B -0.5 A
ICBO
Collector cut-off current
VCB=-140V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-3A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-12V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=-5A;RL=12Ω
IB1=-IB2=-0.5A
VCC=-60V
hFE classifications
O
P
Y
50-100 70-140 90-180
Product Specification
2SA1672
MIN TYP. MAX UNIT
-140
V
-2.0
V
-10 μA
-10 μA
50
180
20
MHz
0.30
μs
0.90
μs
0.20
μs
2
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