2SA1730 データシートの表示（PDF） - TY Semiconductor

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2SA1730

PNP Epitaxial Planar Silicon

TY Semiconductor 

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current Gain

Gain bandwidth product

Common base output capacitance

Collector-to-emitter saturation voltage

Base-to-emitter saturation voltage

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-to-base breakdown voltage

Turn-on time

Storage time

Turn-off time

Symbol

Testconditons

IcBO VCB = -40V , IE = 0

IEBO VEB = -3V , IC = 0

hFE VCE = -2V , IC = -500mA

fT VCE = -2V , IC = -500mA

Cob VCB = -10V , f = 1MHz

VCE(sat) IC = -1.5A , IB =-75mA

VBE(sat) IC = -1.5A , IB =-75mA

V(BR)CBO IC = -10ìA , IE = 0

V(BR)CEO IC = -1mA , RBE =

V(BR)EBO IE = -10ìA , IC = 0

ton

tstg

toff

hFE Classification

Marking

Rank

hFE

Q

70 140

AH

R

100 200

S

140 280

Product specification

2SA1730

Min Typ Max Unit

-1 ìA

-1 ìA

70

280

300

MHz

35

pF

-0.3 -0.8 V

-0.95 -1.3 V

-50

V

-40

V

-5

V

50 100 ns

120 220 ns

150 300 ns

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sales@twtysemi.com

4008-318-123

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