2SA1931 データシートの表示（PDF） - Toshiba

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2SA1931

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS)

Toshiba 

−10

Common emitter

Tc = 25°C

−8

IC – VCE

−6

−4

−2

−100

−90

−80

−70

−60

−50

−40

−30

−20

IB = −10 mA

0

0

−2

−4

−6

−8

−10

Collector−emitter voltage VCE (V)

2SA1931

−8

Common emitter

VCE = −1 V

−6

IC – VBE

−4

Tc = 100°C

25

−2

−25

0

0

−0.4

−0.8

−1.2

−1.6

−2.0

Base−emitter voltage VBE (V)

hFE – IC

500

Tc = 100°C

300

25

−25

100

50

30

Common emitter

VCE = −1 V

10

−0.03

−0.1

−0.3

−1

−3

−10

Collector current IC (A)

VCE (sat) – IC

−10

−5 Common emitter

−3 IC/IB = 20

−1

−0.5

−0.3

−0.1

Tc = 100°C

−0.05

−0.03

25

−25

−0.01

−0.01 −0.03 −0.1 −0.3

−1

−3

−10

Collector current IC (A)

VBE (sat) – IC

−5

−3

−1

−25

−0.5

Tc = 100°C 25

−0.3

Common emitter

−0.1 IC/IB = 20

−0.03

−0.1

−0.3 −0.5 −1

−3 −5 −10

Collector current IC (A)

Safe operating area

−10

IC max (Pulse)*

−5

−3 IC max (Continuous)

1 ms*

10 ms*

100 ms*

−1

DC operation

Tc = 25°C

−0.5

−0.3

*: Single non-repetitive pulse

Tc = 25°C

−0.1 Curves must be de-rated

−0.05 linearly with increase in

temperature.

−0.03

−0.1 −0.3

−1

−3

VCEO max

−10

−30

−100

Collector−emitter voltage VCE (V)

3

2006-11-13

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