2SA2029M3T5G(2004) データシートの表示（PDF） - ON Semiconductor

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2SA2029M3T5G
(Rev.:2004)

PNP Silicon General Purpose Amplifier Transistor

ON Semiconductor 

2SA2029M3T5G

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristic

Symbol

Min

Typ

Max

Unit

Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0)

V(BR)CBO

−60

−

−

Vdc

Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0)

V(BR)CEO

−50

−

−

Vdc

Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0)

V(BR)EBO

−6.0

−

−

Vdc

Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0)

ICBO

−

−

−0.5

nA

Emitter−Base Cutoff Current (VEB = −7.0 Vdc, IB = 0)

IEBO

−

−

−0.1

mA

Collector−Emitter Saturation Voltage (Note 2)

(IC = −50 mAdc, IB = −5.0 mAdc)

VCE(sat)

−

Vdc

−

−0.5

DC Current Gain (Note 2)

(VCE = −6.0 Vdc, IC = −1.0 mAdc)

hFE

−

120

−

560

Transition Frequency

(VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz)

fT

MHz

−

140

−

Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz)

COB

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

−

3.5

−

pF

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