A770 データシートの表示（PDF） - Inchange Semiconductor
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A770 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SA770
2SA771
IC=-25mA ,IB=0
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A
ICBO
Collector
cut-off current
2SA770 VCB=-60V; IE=0
2SA771 VCB=-80V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-1A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-12V
Switching times
tr
Rise time
tstg
Storage time
tf
Fall time
IC=-3A ; VCC=-9V
IB1=-IB2=-0.4A;RL=3Ω
Product Specification
2SA770 2SA771
MIN TYP. MAX UNIT
-60
V
-80
-1.0
V
-1.0 mA
-1.0 mA
40
10
MHz
0.9
μs
1.0
μs
0.1
μs
2
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