A636 データシートの表示（PDF） - Inchange Semiconductor
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A636 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA636 2SA636A
DESCRIPTION
·With TO-202 package
·Complement to type 2SC1098/1098A
·High breakdown voltage
·High transition frequency
APPLICATIONS
·For audio frequency power amplifier and
low speed switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
2SA636
2SA636A
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
ICM
Collector current-peak
IBB
Base current
PT
Total power dissipation
TC=25℃
Ta=25℃
Tj
Junction temperature
Tstg
Storage temperature
VALUE
-70
-45
-60
-5
-3
-5
-0.6
10
1.2
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
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