2SA757 データシートの表示（PDF） - Quanzhou Jinmei Electronic

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2SA757

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=∞

V(BR)CBO Collector-base breakdown voltage IC=-5mA ,IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-5mA ,IC=0

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-1A

VBE

Base-emitter on voltage

IC=-1A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-30V; IE=0

hFE-1

DC current gain

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-5A ; VCE=-5V

fT

Transition frequency

IC=-1A ; VCE=-5V

‹ hFE-1 Classifications

A

B

C

25-60 50-120 100-200

Product Specification

2SA757

MIN TYP. MAX UNIT

-100

V

-120

V

-5

V

-1.8

V

-1.5

V

-1

mA

25

200

20

24

MHz

2

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