A775 データシートの表示（PDF） - Quanzhou Jinmei Electronic

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コンポーネント説明

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A775

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-10μA ,IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-10μA ,IC=0

VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA

ICBO

Collector cut-off current

VCB=-100V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE

DC current gain

IC=-50mA ; VCE=-4V

fT

Transition frequency

IC=-50mA ; VCE=-4V

Product Specification

2SA775

MIN TYP. MAX UNIT

-100

V

-100

V

-4

V

-1.0

V

-1.0 μA

-1.0 μA

50

30

MHz

2

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