B1011 データシートの表示（PDF） - Panasonic Corporation

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B1011

Silicon PNP triple diffusion planar type

Panasonic Corporation 

Power Transistors

2SB1011

Silicon PNP triple diffusion planar type

For low-frequency output amplification

■ Features

• High collector-base voltage (Emitter open) VCBO

• High collector-emitter voltage (Base open) VCEO

• Large collector power dissipation PC

• Low collector-emitter saturation voltage VCE(sat)

■ Absolute Maximum Ratings Ta = 25°C

Parameter

Symbol Rating

Unit

Collector-base voltage (Emitter open) VCBO

−400

V

Collector-emitter voltage (Base open) VCEO

−400

V

Emitter-base voltage (Collector open) VEBO

−5

V

Collector current

IC

−100

mA

Peak collector current

ICP

−200

mA

Collector power dissipation

PC

1.2

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg −55 to +150 °C

φ 3.16±0.1

8.0+–00..15

Unit: mm

3.2±0.2

0.75±0.1

0.5±0.1

4.6±0.2

2.3±0.2

0.5±0.1

1.76±0.1

1: Emitter

123

2: Collector

3: Base

TO-126B-A1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter

Symbol

Conditions

Min Typ Max Unit

Collector-base voltage (Emiter open) VCBO IC = −100 µA, IE = 0

−400

V

Collector-emitter voltage (Base open) VCEO IC = −500 µA, IB = 0

−400

V

Emiter-base voltage (Collector open) VEBO IE = −100 µA, IC = 0

−5

V

Forward current transfer ratio

hFE VCE = −5 V, IC = −30 mA

30



Collector-emitter saturation voltage

VCE(sat) IC = −50 mA, IB = −5 mA

−2.5

V

Base-emitter saturation voltage

VBE(sat) IC = −50 mA, IB = −5 mA

−1.5

V

Transition frequency

fT

VCB = −30 V, IE = 20 mA, f = 200 MHz

70

MHz

Collector output capacitance

(Common base, input open circuited)

Cob VCB = −30 V, IE = 0, f = 1 MHz

9

pF

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: March 2003

SJD00036BED

1

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