2SA778A データシートの表示（PDF） - Renesas Electronics

部品番号

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2SA778A

Silicon PNP Epitaxial

Renesas Electronics 

2SA778(K), 2SA778A(K)

Electrical Characteristics

Item

Collector to base

breakdown voltage

Collector to emitter

breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Symbol

V(BR)CBO

2SA778(K)

Min Typ Max

–150 —

—

V(BR)CER –150

—

—

ICBO

—

— –1.0

—

—

—

IEBO

—

— –1.0

hFE

30 100 —

Collector to emitter

saturation voltage

Base to emitter saturation

voltage

Collector output

capacitance

Gain bandwidth product

VCE(sat)

VBE(sat)

Cob

fT

— –0.3 –1.0

— –0.77 –1.0

—

—

10

—

50

—

Turn on time

Turn off time

ton

— 135 —

toff

—

1.7

—

Storage time

tstg

—

—

1.0

2SA778A(K)

Min Typ Max

–180 —

—

–180 —

—

—

—

—

—

— –1.0

—

— –1.0

40 100 200

— –0.3 –1.0

— –0.77 –1.0

—

—

10

—

50

—

— 135 —

—

1.7

—

—

—

1.0

(Ta = 25°C)

Unit

Test conditions

V IC = –50 µA, IE = 0

V

µA

µA

µA

V

V

pF

MHz

ns

µs

µs

IC = –50 µA,

RBE = 30 kΩ

VCB = –100 V, IE = 0

VCB = –150 V, IE = 0

VEB = –5 V, IC = 0

VCE = –3 V,

IE = –15 mA

IC = –15 mA,

IB = –1 mA

IC = –15 mA,

IB = –1 mA

VCB = –10 V, IE = 0,

f = 1 MHz

VCE = –3 V,

IC = –15 mA

VCC = –10.3 V

IC = 10 IB1 = –10

IB2 = –10 mA

VCC = –10 V,

IC =–17 mA

IB1 = –1mA,

IB2 = –12 mA

REJ03G0628-0300 Rev.3.00 Jul 30, 2007

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