2SB1001-J(V2) データシートの表示（PDF） - KEXIN Industrial

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2SB1001-J
(Rev.:V2)

PNP Transistors

KEXIN Industrial 

SMD Type

PNP Transistors

2SB1001

Transistors

■ Features

● Low frequency power amplifier

● Complementary to 2SD1367

1.70 0.1

0.42 0.1

0.46 0.1

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector current -Pulse

(Note.1)

Collector Power Dissipation

Junction Temperature

Storage Temperature range

Note.1: PW ≤ 10ms,Duty cycle≤ 20℅

Symbol

VCBO

VCEO

VEBO

IC

ICP

PC

TJ

Tstg

Rating

-20

-16

-6

-2

-3

1

150

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Collector- base breakdown voltage

VCBO Ic= -100 μA， IE=0

Collector- emitter breakdown voltage

VCEO Ic= -1 mA，RBE=∞

Emitter - base breakdown voltage

VEBO IE= -100μA， IC=0

Collector-base cut-off current

ICBO VCB= -16V , IE=0

Emitter cut-off current

IEBO VEB= -5V , IC=0

Collector-emitter saturation voltage

VCE(sat) IC=-1 A, IB=-100mA

Base - emitter saturation voltage

VBE(sat) IC=-1 A, IB=-100mA

DC current gain

hFE VCE= -2V, IC= -100 mA

Collector output capacitance

Cob VCB = –10V, IE = 0, f = 1MHz

Transition frequency

fT

VCE= -2V, IC= -10mA

■ Classification of hfe

Type

2SB1001-H

Range

100-200

Marking

BH

2SB1001-J

160-320

BJ

1.Base

2.Collector

3.Emitter

Unit

V

A

W

℃

Min Typ Max Unit

-20

-16

V

-6

-0.1

uA

-0.1

-0.15 -0.3

V

-1 -1.2

100

320

50

pF

150

MHz

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