2SB1207 データシートの表示（PDF） - Panasonic Corporation
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2SB1207 Datasheet PDF : 2 Pages
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Transistor
2SB1207
Silicon PNP epitaxial planer type
For low-voltage output amplification
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–15
V
Collector to emitter voltage VCEO
–10
V
Emitter to base voltage
VEBO
–7
V
Peak collector current
ICP
–1
A
Collector current
IC
– 0.5
A
Collector power dissipation PC
300
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
4.0±0.2
Unit: mm
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –10V, IE = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = –0.5A*2
VCE = –2V, IC = –1A*2
IC = –0.4A, IB = –8mA
IC = –0.4A, IB = –8mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
typ
max Unit
–100 nA
–15
V
–10
V
–7
V
130
350
60
– 0.16 – 0.3
V
– 0.8 –1.2
V
130
MHz
22
pF
*2 Pulse measurement
*1hFE1 Rank classification
Rank
R
S
hFE1
130 ~ 220 180 ~ 350
1
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