2SB1219A データシートの表示（PDF） - KEXIN Industrial

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2SB1219A

PNP Transistors

KEXIN Industrial 

SMD Type

PNP Transistors

2SB1219A

Transistors

■ Features

● Large collector current IC

● Complementary to 2SD1820A

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

Storage Temperature range

Symbol

Rating

Unit

VCBO

-60

VCEO

-50

V

VEBO

-5

IC

-0.5

A

ICP

-1

PC

150

mW

TJ

150

℃

Tstg

-55 to 150

1 Base

2 Emitter

3 Collector

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

VCBO

VCEO

VEBO

ICBO

Ic= -100 μA， IE=0

Ic= -2 mA, IB=0

IE= -100μA， IC=0

VCB= -50 V , IE=0

Emitter cut-off current

IEBO VEB= -4V , IC=0

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

VCE(sat)

VBE(sat)

hFE

IC=-300 mA, IB=-30mA

IC=-300 mA, IB=-30mA

VCE= -10V, IC= -150 mA

VCE= -10V, IC= -500 mA

Collector output capacitance

Cob VCB= -10V, IE= 0,f=1MHz

Transition frequency

fT

VCE= -10V, IC= -50 mA,f=200MHz

■ Classification of hfe(1)

Type

Range

Marking

2SB1219A-Q

85-170

DQ

2SB1219A-R

120-240

DR

2SB1219A-S

170-340

DS

2SB1219A

85-340

D

Min Typ Max Unit

-60

-50

V

-5

-0.1

uA

-0.1

-0.35 -0.6

V

-1.1 -1.5

85

340

40

6 15 pF

200

MHz

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