2SB1220-T データシートの表示（PDF） - KEXIN Industrial

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2SB1220-T

PNP Transistors

KEXIN Industrial 

SMD Type

PNP Transistors

2SB1220

Transistors

■ Features

● High collector to emitter voltage VCEO.

● Low noise voltage NV.

● Complementary to 2SD1821

1 Base

2 Emitter

3 Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

Storage Temperature range

Symbol

Rating

Unit

VCBO

-150

VCEO

-150

V

VEBO

-5

IC

-50

mA

ICP

-100

PC

150

mW

TJ

150

℃

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

Symbol

Test Conditions

VCBO Ic= -100 μA， IE=0

VCEO Ic= -1 mA, IB=0

VEBO IE= -100μA， IC=0

ICBO VCB= -100V , IE=0

IEBO VEB= -4V , IC=0

VCE(sat) IC=-30 mA, IB=-3mA

VBE(sat) IC=-30 mA, IB=-3mA

hFE VCE= -5V, IC= -10 mA

Min Typ Max Unit

-150

-150

V

-5

-0.1

uA

-0.1

-1

V

-1.2

130

450

Noise voltage

NV

VCE = –10V, IC = –1mA, GV= 80dB,

Rg = 100kΩ , Function = FLAT

150

mV

Collector output capacitance

Transition frequency

Cob VCB= -10V, IE= 0,f=1MHz

fT VCE= -10V, IE= 10 mA,f=200MHz

4

pF

200

MHz

■ Classification of hfe

Type

2SB1220-R

Range

130-220

Marking

IR

2SB1220-S

185-330

IS

2SB1220-T

260-450

IT

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