2SB1258 データシートの表示（PDF） - SavantIC Semiconductor
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2SB1258 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1258
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-6mA
VBEsat
Base-emitter saturation voltage
IC=-3A; IB=-6mA
ICBO
Collector cut-off current
VCB=-100V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-3A ; VCE=-2V
fT
Transition frequency
IE=0.2A ; VCE=-12V
COB
Collector output capacitance
IE=0; f=1MHz;VCB=-10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-3A; IB1=-IB2=-6mA
VCC=-30V ,RL=10B
MIN TYP. MAX UNIT
-100
V
-1.5
V
-2.0
V
-10
µA
-10
µA
1000
100
MHz
100
pF
0.6
µs
1.6
µs
0.5
µs
2
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