2SB1255 データシートの表示（PDF） - Inchange Semiconductor
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2SB1255 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Darlington Power Transistors
Product Specification
2SB1255
DESCRIPTION
·With TO-3PFa package
·Optimum for 90W Hi-Fi output
·High foward current transfer ratio hFE
·Low collector-emitter saturation voltage
·Complement to type 2SD1895
APPLICATIONS
·Power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICP
Collector current-peak
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
-160
-140
-8
-15
-12
100
3
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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