SJD00074BED データシートの表示（PDF） - Panasonic Corporation
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SJD00074BED Datasheet PDF : 3 Pages
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Power Transistors
2SB1435
Silicon PNP epitaxial planar type
For low-frequency output amplification
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Large collector current IC
• Allowing automatic insertion with radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−50
V
Collector-emitter voltage (Base open) VCEO
−50
V
Emitter-base voltage (Collector open) VEBO
−5
V
Collector current
IC
−2
A
Peak collector current
ICP
−3
A
Collector power dissipation
PC
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
7.5±0.2
Unit: mm
4.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.4±0.1
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emiter open) VCBO IC = −10 µA, IE = 0
−50
Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0
−50
Emiter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−5
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0
− 0.1
Forward current transfer ratio
hFE1 * VCE = −2 V, IC = −200 mA
120
340
hFE2 VCE = −2 V, IC = −1 A
60
Collector-emitter saturation voltage
VCE(sat) IC = −1 A, IB = −50 mA
− 0.2 − 0.3
Base-emitter saturation voltage
VBE(sat) IC = −1 A, IB = −50 mA
− 0.85 −1.20
Transition frequency
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
80
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
45 60
V
V
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE1
120 to 240 170 to 340
Publication date: March 2003
SJD00074BED
1
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