2SB1462J データシートの表示（PDF） - Panasonic Corporation
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2SB1462J Datasheet PDF : 3 Pages
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Transistors
2SB1462J
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD2216J
■ Features
• High forward current transfer ratio hFE
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−60
V
Collector-emitter voltage (Base open) VCEO
−50
V
Emitter-base voltage (Collector open) VEBO
−7
V
Collector current
IC
−100
mA
Peak collector current
ICP
−200
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg −55 to +125 °C
1.60+–00..0035
1.00±0.05
3
12
0.27±0.02
(0.50)(0.50)
5˚
Unit: mm
0.12+–00..0013
Marking Symbol: A
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage *1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
IC = −10 µA, IE = 0
IC = −100 µA, IB = 0
IE = −10 µA, IC = 0
VCB = −20 V, IE = 0
VCE = −10 V, IE = 0
VCE = −10 V, IC = −2 mA
IC = −100 mA, IB = −10 mA
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
Min Typ Max
−60
−50
−7
− 0.1
−100
180
390
− 0.3 − 0.5
80
2.7
Unit
V
V
V
µA
µA
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJC00087BED
1
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