2SB1316 データシートの表示（PDF） - ROHM Semiconductor
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2SB1316 Datasheet PDF : 3 Pages
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Transistors
2SB1580 / 2SB1316
Power Transistor (−100V , −2A)
2SB1580 / 2SB1316
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2195 / 2SD1980.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−100
Collector-emitter voltage
VCEO
−100
Emitter-base voltage
VEBO
−8
Collector current
IC
−2
−3
Collector 2SB1580
power
dissipation 2SB1316
2
PC
1
10
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to +150
∗1 Single pulse Pw=100ms
∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Unit
V
V
V
A(DC)
A(Pulse) ∗1
W
∗2
W(Tc=25°C)
°C
°C
zPackaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗ Denotes hFE
2SB1580
MPT3
1k to 10k
BN∗
T100
1000
2SB1316
CPT3
1k to 10k
−
TL
2500
zEquivalent circuit
C
B
R1
R2
E
R1 3.5kΩ
R2 300Ω
B : Base
C : Collector
E : Emitter
zExternal dimensions (Unit : mm)
2SB1580
4.0
1.0
2.5 0.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
2SB1316
5.5
1.5
0.9
0.8Min.
ROHM : CPT3
EIAJ : SC-63
1.5
2.5
9.5
C0.5
(1) Base
(2) Collector
(3) Emitter
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
−100
−
−
V
IC = −50µA
Collector-emitter breakdown voltage BVCEO
−100
−
−
V
IC = −5mA
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
ICBO
−10
−
−
−
−
−10
V
IE = −5mA
µA VCB = −100V
Emitter cutoff current
IEBO
−
−
−3
mA VEB = −7V
Collector-emitter saturation voltage
VCE(sat)
−
−
−1.5
V
IC/IB= −1A/−1mA
∗
DC current transfer ratio
hFE
1000
−
10000
−
VCE = −2V , IC = −1A
∗
Transition frequency
Output capacitance
fT
Cob
−
50
−
MHz VCE = −5V , IE =0.1A , f = 30MHz
−
35
−
pF VCB = −10V , IE = 0A , f = 1MHz
∗ Measured using pulse current.
Rev.A
1/2
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