Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1368
DESCRIPTION
·With TO-220F package
·Complement to type 2SD2060
·Low collector saturation voltage:
VCE(SAT)=-1.7V(Max) at IC=-3A,IB=-0.3A
·Collector power dissipation:
PC=25W(TC=25℃)
APPLICATIONS
·With general purpose applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25℃
TC=25℃
VALUE
-80
-80
-5
-4
-0.4
2.0
25
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃