SA8016DH データシートの表示（PDF） - Philips Electronics

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SA8016DH

2.5GHz low voltage fractional-N synthesizer

Philips Electronics 

Philips Semiconductors

2.5GHz low voltage fractional-N synthesizer

Product specification

SA8016

SYMBOL

PARAMETER

CONDITIONS

Phase noise (RSET = 7.5 kΩ, CP = 00)

Synthesizer’s contribution to close-in phase noise

of 900 MHz RF signal at 1 kHz offset.

Synthesizer’s contribution to close-in phase noise

of 1800 MHz RF signal at 1 kHz offset.

L(f)

Synthesizer’s contribution to close-in phase noise

of 800 MHz RF signal at 1 kHz offset.

Synthesizer’s contribution to close-in phase noise

of 2100 MHz RF signal at 1 kHz offset.

GSM

fREF = 13MHz, TCXO,

fCOMP = 1MHz

indicative, not tested

TDMA

fREF = 19.44MHz, TCXO,

fCOMP = 240kHz

indicative, not tested

Interface logic input signal levels; pins 13, 14, 15, 16

VIH

HIGH level input voltage

VIL

LOW level input voltage

ILEAK

Input leakage current

Lock detect output signal (in push/pull mode); pin 1

logic 1 or logic 0

VOL

LOW level output voltage

VOH

HIGH level output voltage

NOTES:

1.

ISET

=

VSET

RSET

bias

current

for

charge

pumps.

Isink = 2mA

Isource = –2mA

2. The relative output current variation is defined as:

DIOUT

IOUT

+

2.

(I2–I1)

I(I2 ) I1)I

;

with V1 + 0.7V,

V2 + VDDCP –0.8V

(See Figure 4.)

MIN.

TYP.

–

–90

–

–83

–

–85

–

–77

0.7*VDD

–

–0.3

–

–0.5

–

–

–

VDD–0.4

–

MAX.

UNIT

–

dBc/Hz

–

dBc/Hz

–

dBc/Hz

–

dBc/Hz

VDD+0.3 V

0.3*VDD V

+0.5

µA

0.4

V

–

V

IZOUT

CURRENT

I2

I1

V1

V2

VPH

I2

I1

Figure 4. Relative Output Current Variation

SR00602

1999 Nov 04

7

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