2SB1693 データシートの表示（PDF） - Panasonic Corporation
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2SB1693 Datasheet PDF : 3 Pages
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Transistors
2SB1693
Silicon PNP epitaxial planar type
For general amplification
■ Features
• Large collector current IC
• Mini type package, allowing downsizing of the equipment and auto-
matic insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−40
V
Collector-emitter voltage (Base open) VCEO
−20
V
Emitter-base voltage (Collector open) VEBO
−15
V
Collector current
IC
− 0.5
A
Peak collector current
ICP
−1
A
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
1
2
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking Symbol: 3D
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
−40
Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0
−20
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−15
Forward current transfer ratio *
hFE1 VCE = −2 V, IC = −100 mA
160
hFE2 VCE = −2 V, IC = −500 mA
100
Collector-emitter saturation voltage * VCE(sat) IC = −100 mA, IB = −10 mA
IC = − 0.5 A, IB = −25 mA
Transition frequency
fT
VCB = −5 V, IE = 50 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
Typ Max
560
−60
−210
170
16
−300
−500
Unit
V
V
V
mV
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: September 2003
SJC00292AED
1
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