2SB1690TL データシートの表示（PDF） - ROHM Semiconductor
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2SB1690TL Datasheet PDF : 3 Pages
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Transistors
2SB1690
General purpose amplification(−12V, −2A)
2SB1690
zApplications
Low frequency amplifier
Deiver
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) : max. −180mV
at IC= −1A / IB= −50mA
zPackaging specifications
Package
Type
Code
Basic ordering
unit (pieces)
2SB1690
Taping
TL
3000
zExternal dimensions (Unit : mm)
TSMT3
(1) Base
(2) Emitter
(3) Collector
2.9
0.4
(3)
(1) (2)
0.95 0.95
1.9
1.0MAX
0.85
0.7
0~0.1
0.16
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗1 Single pulse Pw=1ms
∗2 Each terminal mounted on a recommended land
∗3 Mounted on a 25mm×25mm× t 0.8mm ceramic substrate
Limits
−15
−12
−6
−2
−4
0.5
1
150
−55 to +150
Unit
V
V
V
A
A
∗1
W
∗2
W
∗3
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −15
Collector-emitter breakdown viltage BVCEO −12
Emitter-base breakdown voltage
BVEBO
−6
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collerctor-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE
270
Transition frequency
fT
−
Output capacitance
∗ Pulsed
Cob
−
Typ.
−
−
−
−
−
−120
−
360
15
Max.
−
−
−
−100
−100
−180
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC=−10µA
IC=−1mA
IE=−10µA
VCB=−15V
VEB=−6V
IC=−1A, IB=−50mA
VCE=−2V, IC=−200mA∗
VCE=−2V, IE=200mA, f=100MHz∗
VCB=−10V, IE=0mA, f=1MHz
Rev.B
1/2
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