2SB1572 データシートの表示（PDF） - KEXIN Industrial

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2SB1572

PNP Transistors

KEXIN Industrial 

SMD Type

PNP Transistors

2SB1572

Transistors

■ Features

● Low collector-emitter saturation voltage

● Complementary to 2SD2403

1.70 0.1

0.42 0.1

0.46 0.1

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Collector - Base Voltage

VCBO

-80

Collector - Emitter Voltage

VCEO

-60

Emitter - Base Voltage

VEBO

-6

Collector Current - Continuous

IC

-3

Collector Current - Pulse

ICP

-5

Collector Power Dissipation

PC

2

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Collector- base breakdown voltage

VCBO Ic= -100 uA， IE=0

Collector- emitter breakdown voltage

VCEO Ic= -1 mA, IB=0

Emitter - base breakdown voltage

VEBO IE= -100 uA， IC=0

Collector-base cut-off current

ICBO VCB= -80V , IE=0

Emitter cut-off current

IEBO VEB= -6V , IC=0

Collector-emitter saturation voltage

IC=-2 A, IB=-100 mA

VCE(sat)

IC=-3 A, IB=-150 mA

Base - emitter saturation voltage

VBE(sat) IC=-2 A, IB=-100 mA

Base - emitter voltage

VBE VCE= -2V, IC= -100 mA

DC current gain

VCE= -2V, IC= -100 mA

hFE

VCE= -2V, IC= -1 A

Turn-on Time

Storage Time

Fall Time

ton

tstg

IC = −1 A, VCC = −10 V,

RL = 5.0 Ω, IB1 = −IB2 = −0.1 A,

tf

Collector output capacitance

Cob VCB= -10V, IE= 0,f=1MHz

Transition frequency

fT

VCE= -10V, IE= 300 mA

■ Classification of hfe(2)

Type

2SB1572-X

2SB1572-Y

2SB1572-Z

Range

100-200

160-320

200-400

Marking

HX

HY

HZ

1.Base

2.Collector

3.Emitter

Unit

V

A

W

℃

Min Typ Max

-80

-60

-6

-0.1

-0.1

-0.2 -0.4

-0.3 -0.6

-0.89 -1.2

-0.63

-0.73

80

100 200 400

155

510

35

45

160

Unit

V

uA

V

ns

pF

MHz

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