2SB1587 データシートの表示（PDF） - Inchange Semiconductor

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2SB1587

Silicon PNP Darlington Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Darlington Power Transistors

Product Specification

2SB1587

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-30mA; IB=0

-150

V

VCEsat Collector-emitter saturation voltage IC=-6 A;IB=-6m A

-2.5

V

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

IC=-6 A;IB=-6m A

VCB=-160V; IE=0

VEB=-5V; IC=0

-3.0

V

-100 μA

-100 μA

hFE

DC current gain

IC=-6A ; VCE=-4V

5000

fT

Transition frequency

IC=-1A ; VCE=-12V

65

MHz

COB

Output capacitance

固I电NC半H导A体NGE SEMICONDUCTOR Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IE=0; VCB=-10V;f=1MHz

IC=-6A;RL=10Ω

IB1=-IB2=-6mA

VCC=-60V

160

pF

0.7

μs

3.6

μs

0.9

μs

‹ hFE classifications

O

P

Y

5000-12000 6500-20000 15000-30000

2

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