B546 データシートの表示（PDF） - Quanzhou Jinmei Electronic

部品番号

コンポーネント説明

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B546

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-0.5mA; IE=0

V(BR)EBO Emitter-base breakdown votage

IE=-0.5mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-500m A;IB=-50m A

ICBO

Collector cut-off current

VCB=-150V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-0.4A ; VCE=-10V

fT

Transition frequency

IC=-0.4A ; VCE=-10V

‹ hFE classifications

R

O

Y

40-80 70-140 120-240

Product Specification

2SB546

MIN TYP. MAX UNIT

-150

V

-200

V

-5

V

-1.0

V

-50 μA

-50 μA

40

240

5

MHz

2

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