2SB1626 データシートの表示（PDF） - Quanzhou Jinmei Electronic
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2SB1626 Datasheet PDF : 3 Pages
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JMnic
Silicon PNP Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-5mA
VBEsat Base-emitter saturation voltage
IC=-5A; IB=-5mA
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
VCB=-110V; IE=0
VEB=-5V; IC=0
IC=-5A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-12V
COB
Collector output capacitance
f=1MHz;VCB=-10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5A IB1=-IB2=-5mA
VCC=30V ,RL=6Ω
hFE Classifications
O
p
5000-12000 6500-20000
Y
15000-30000
Product Specification
2SB1626
MIN TYP. MAX UNIT
-110
V
-2.5
V
-3.0
V
-0.1
mA
-0.1
mA
5000
100
MHz
110
pF
1.1
μs
3.2
μs
1.1
μs
2
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