2SB1624 データシートの表示（PDF） - Inchange Semiconductor
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2SB1624 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Darlington Power Transistors
Product Specification
2SB1624
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0
-110
V
VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-5mA
-2.5
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=-5A ;IB=-5mA
VCB=-110V; IE=0
VEB=-5V; IC=0
-3.0
V
-100 μA
-100 μA
hFE
DC current gain
IC=-5A ; VCE=-4V
5000
Cob
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
110
pF
fT
Transition frequency
固I电NC半H导A体NGE SEMICONDUCTOR Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-0.5A ; VCE=-12V
IC=-5A;RL=6Ω
IB1=- IB2=-5mA
VCC=-30V
100
MHz
1.1
μs
3.2
μs
1.1
μs
hFE Classifications
O
P
Y
5000-12000 6500-20000 15000-30000
2
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