2SB1572 データシートの表示（PDF） - TY Semiconductor

部品番号

コンポーネント説明

メーカー

2SB1572

Silicon PNP Epitaxial Planar

TY Semiconductor 

Electrical Characteristics Ta = 25

Parameter

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain *

Base to Emitter Voltage *

Collector Saturation Voltage *

Collector Saturation Voltage *

Base Saturation Voltage *

Gain Bandwidth Product

Output Capacitance

Turn-on Time

Storage Time

Fall Time

* Pulsed: PW 350 ìs, Duty Cycle 2%.

Symbol

Testconditons

ICBO VCB = -80 V, IE = 0

IEBO VEB = -6.0 V, IC = 0

hFE1 VCE = -2.0 V, IC = -0.1 A

hFE2 VCE = -2.0 V, IC = -1.0 A

VBE VCE = -2.0 V, IC = -0.1 A

VCE(sat)1 IC = -2.0 A, IB = -0.1 A

VCE(sat)2 IC = -3.0 A, IB = -0.15 A

VBE(sat) IC = -2.0 A, IB = -0.1 A

fT VCE = -10 V, IE = 0.3 A

Cob VCB = -10 V, IE = 0, f = 1.0 MHz

ton

IC = -1.0 A, VCC = -10 V,

tstg RL = 5.0 ? , IB1 = -IB2 = -0.1 A,

tf

hFE Classification

Marking

hFE

HX

100 200

HY

160 320

HZ

200 400

Product specification

2SB1572

Min Typ Max Unit

-100 nA

-100 nA

80

100 200 400

-0.63 -0.685 -0.73 V

-0.2 -0.4 V

-0.3 -0.6 V

-0.89 -1.2 V

160

MHz

45

pF

155

ns

510

ns

35

ns

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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